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5 L" j& d( U: T. ?; V! gCOVER False-colored scanning electron micrograph of ~8-micrometer-tall germanium crystals, separated by finite gaps, grown onto silicon pillars. In structures like this one, wafer bowing and layer cracking are absent, allowing single-crystal integration of different materials onto a silicon substrate, which serves as a platform for many applications, such as multiple-junction solar cells, x-ray and particle detectors, or power electronic devices. See page 1330. Image: Claudiu V. Falub, Laboratory for Solid State Physics, Swiss Federal Institute of Technology (ETH-Zürich) |
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发表于 2012-3-16 23:57
发表于 2012-3-17 08:31
