|
- 积分
- 17983
- 威望
- 17983
- 包包
- 26159
|
[hide][/hide]7 }: s" o) x* B
 ' k1 p5 `. y2 N* F- H
% C4 t8 Z4 S5 j% T0 X @ yCOVER False-colored scanning electron micrograph of ~8-micrometer-tall germanium crystals, separated by finite gaps, grown onto silicon pillars. In structures like this one, wafer bowing and layer cracking are absent, allowing single-crystal integration of different materials onto a silicon substrate, which serves as a platform for many applications, such as multiple-junction solar cells, x-ray and particle detectors, or power electronic devices. See page 1330. Image: Claudiu V. Falub, Laboratory for Solid State Physics, Swiss Federal Institute of Technology (ETH-Zürich) |
附件: 你需要登录才可以下载或查看附件。没有帐号？注册
-
总评分: 威望 + 20
包包 + 20
查看全部评分
|
发表于 2012-3-16 23:57
发表于 2012-3-17 08:31
